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TeraSense Terahertz sources

TeraSense Terahertz sources

Manufacturer:
TeraSense terahertz imaging

More Products by TeraSense terahertz imaging
Solution Type: Terahertz Technology

TeraSense series of terahertz sources (IMPATT diodes) are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+) — and (n+) — regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation. Terasense is now offering its upgraded version of terahertz source. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order IMPATT diode with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of THz source with optimized frequency @ 100 GHz can reach up to 100 mW.



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  • IMPATT technology
  • 100 GHz and 140 GHz available frequencies
  • High power output
  • Protective Isolator for enhanced stability
  • Low cost and compact size
  • 1 year warranty


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